fds9431a fds9431a rev. a2 features ? -3.5 a, -20 v. r ds(on) = 0.130 ? @ v gs = -4.5 v r ds(on) = 0.180 ? @ v gs = -2.5 v. fast switching speed. high density cell design for extremely low r ds(on) . high power and current handling capability. ? 1999 fairchild semiconductor corporation september 1999 absolute maximum ratings t a =25 o c unless otherwise noted symbol parameter ratings units v dss drain-source voltage -20 v v gss gate-source voltage 8 v i d drain current - continuous (note 1a) -3.5 a - pulsed -18 power dissipation for sin g le operation (note 1a) 2.5 (note 1b) 1.2 p d (note 1c) 1.0 w t j , t stg operating and storage junction temperature range -55 to +150 c thermal characteristics r ja thermal resistance, junction-to-ambient (note 1a) 50 c/w r jc thermal resistance, junction-to-case (note 1) 25 c/w package marking and ordering information device marking device reel size tape width quantity fds9431a fds9431a 13 ?? 12mm 2500 units fds9431a p-channel 2.5v specified mosfet general description this p-channel 2.5v specified mosfet is produced using fairchild's proprietary, high cell density, dmos technology. this very high density process has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. applications dc/dc converter power management load switch battery protection s d s s so-8 d d d g 5 6 8 3 1 7 4 2
fds9431a fds9431a rev. a2 electrical characteristics t a = 25 c unless otherwise noted symbol parameter test conditions min typ max units off characteristics bv dss drain-source breakdown voltage v gs = 0 v, i d = -250 a -20 v bv dss t j breakdown voltage temperature coefficient i d = -250 a,referenced to 25 c -28 mv/ c i dss zero gate voltage drain current v ds = -16 v, v gs = 0 v -1 a i gssf gate-body leakage current, forward v gs = 8 v, v ds = 0 v 100 na i gssr gate-body leakage current, reverse v gs = -8 v, v ds = 0 v -100 na on characteristics (note 2) v gs(th) gate threshold voltage v ds = v gs , i d = -250 a -0.4 -0.6 -1 v v gs(th) t j gate threshold voltage temperature coefficient i d = -250 a,referenced to 25 c 2 mv/ c r ds(on) static drain-source on-resistance v gs = -4.5 v, i d = -3.5 a v gs = -2.5 v, i d = -3.0 a v gs = -4.5 v, i d = -3.5 a t j =125 c 0.110 0.140 0.155 0.130 0.180 0.220 i d(on) on-state drain current v gs = -4.5 v, v ds =-5 v -10 a g fs forward transconductance v ds = -5 v, i d = -3.5 a 6.5 s dynamic characteristics c iss input capacitance 405 pf c oss output capacitance 170 pf c rss reverse transfer capacitance v ds = -10 v, v gs = 0 v, f = 1.0 mhz 45 pf switching characteristics (note 2) t d(on) turn-on delay time 6.5 13 ns t r turn-on rise time 20 35 ns t d(off) turn-off delay time 31 50 ns t f turn-off fall time v dd = -5 v, i d = -1 a, v gs = -4.5 v, r gen = 6 21 35 ns q g total gate charge 6 8.5 nc q gs gate-source charge 0.8 nc q gd gate-drain charge v ds = -5 v, i d = -3.5 a, v gs = -4.5 v 1.3 nc drain-source diode characteristics and maximum ratings i s maximum continuous drain-source diode forward current -2.1 a v sd drain-source diode forward voltage v gs = 0 v, i s = -2.1 a (note 2) -0.7 -1.2 v notes: 1: r ja is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the so lder mounting surface of the drain pins. r jc is guaranteed by design while r ca is determined by the user's board design. scale 1 : 1 on letter size paper 2: pulse test: pulse width 300 s, duty cycle 2.0% a) 50 c/w when mounted on a 1 in 2 pad of 2 oz. copper. b) 105 c/w when mounted on a 0.04 in 2 pad of 2 oz. copper. c) 125 c/w on a minimum mounting pad.
fds9431a fds9431a rev. a2 figure 1. on-region characteristics. figure 2. on-resistance variation with drain current and gate voltage. figure 3. on-resistance variation withtemperature. figure 4. on-resistance variation with gate-to-source voltage. figure 5. transfer characteristics. figure 6. body diode forward voltage variation with source current and temperature. typical characteristics 0 2 4 6 8 10 012345 -v ds , drain to source voltage (v) -i d , drain current (a) v gs = -4.5v -3.5v -2.5v -2.0v -1.5v 0246810 0.8 1 1.2 1.4 1.6 1.8 2 -i , drain current (a) drain-source on-resistance v = -2.0v gs d r , normalized ds(on) -3.0 -3.5 -4.5 -4.0 -2.5 12345 0 0.1 0.2 0.3 0.4 0.5 -v ,gate to source voltage (v) r ,on-resistance(ohm) gs 25 c t = 125 c j i = -0.8a d ds(on) 0 0.2 0.4 0.6 0.8 1 1.2 1.4 0.0001 0.001 0.01 0.1 1 10 -v , body diode forward voltage (v) -i , reverse drain current (a) 25 c -55 c v = 0v gs sd s t = 125 c j r , normalized ds(on) -50 -25 0 25 50 75 100 125 150 0.6 0.8 1 1.2 1.4 1.6 t , junction temperature ( c) drain-source on-resistance j v = -4.5v gs i = -1.6a d 01234 0 2 4 6 8 10 -v , gate to source voltage (v) -i , drain current (a) v = -5v ds gs d t = -55 c a 125 c 25 c
fds9431a fds9431a rev. a2 figure 7. gate charge characteristics. figure 8. capacitance characteristics. figure 9. maximum safe operating area. figure 10. single pulse maximum power dissipation. typical characteristics (continued) figure 11. transient thermal response curve. thermal characterization performed using the conditions described in note 1c. transient themal response will change depending on the circuit board design. 0 1 2 3 4 5 02468 qg, gate charge (nc) -v gs , gate-source voltage (v) i d = -1.6a v ds = -5v -15v 0 10 20 30 40 50 0.001 0.01 0.1 1 10 100 1000 single pulse time (sec) power (w) single pulse r ja = 125 o c/w t a = 25 o c 0.0001 0. 001 0.01 0.1 1 10 100 300 0. 001 0. 002 0. 005 0. 0 1 0. 0 2 0. 0 5 0.1 0.2 0.5 1 t , ti me (s e c) tr ansi ent t h er mal resistanc e r(t), norm alized effective 1 s i n g l e p u l s e d = 0. 5 0. 1 0. 05 0. 02 0. 0 1 0.2 d u t y c y c l e, d = t /t 1 2 r (t) = r(t) * r r = 125 c/ w ja ja ja t - t = p * r (t ) ja a j p ( pk ) t 1 t 2 0.1 0.2 0.5 1 2 5 10 20 50 100 200 500 1000 2000 -v , drain to source voltage (v) capacitance (pf) ds c is s f = 1 mhz v = 0 v g s c oss c rss 0.1 0.3 1 2 5 10 30 0.01 0.05 0.5 3 10 50 - v , drain-so urce voltage (v) - i , drain current (a) rd s( on ) li m it d a dc ds 1s 100 m s 10 m s 1ms 10 s v = -4.5v singl e pul se r = 135 c/w t = 2 5 c ja gs a 100 us v gs = -4.5v single pulse r ja = 125 c/w t a = 25 c
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